The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2023

Filed:

Oct. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Li-Ling Liao, Hsinchu, TW;

Ming-Chih Yew, Hsinchu, TW;

Chia-Kuei Hsu, Hsinchu, TW;

Shu-Shen Yeh, Taoyuan, TW;

Po-Yao Lin, Zhudong Township, TW;

Shin-Puu Jeng, Po-Shan Village, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 23/49805 (2013.01); H01L 23/49822 (2013.01); H01L 51/0023 (2013.01); H01L 23/49816 (2013.01);
Abstract

An organic interposer includes dielectric material layers embedding redistribution interconnect structures, package-side bump structures located on a first side of the dielectric material layers, and die-side bump structures located on a second side of the dielectric material layers. A gap region is present between a first area including first die-side bump structures and a second area including second die-side bump structures. Stress-relief line structures are located on, or within, the dielectric material layers within an area of the gap region in the plan view. Each stress-relief line structures may include straight line segments that laterally extend along a respective horizontal direction and is not electrically connected to the redistribution interconnect structures. The stress-relief line structures may include the same material as, or may include a different material from, a metallic material of the redistribution interconnect structures or bump structures that are located at a same level.


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