The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Nov. 06, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Keunwook Shin, Yongin-si, KR;
Changhyun Kim, Seoul, KR;
Seunggeol Nam, Suwon-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyunjae Song, Hwaseong-si, KR;
Eunkyu Lee, Yongin-si, KR;
Changseok Lee, Seoul, KR;
Alum Jung, Suwon-si, KR;
Yeonchoo Cho, Seunnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A method of growing graphene includes forming a carbon monolayer on a substrate by injecting a first reaction gas into a reaction chamber, wherein the first reaction gas includes a first source including a component that is a carbon source and belongs to an electron withdrawing group, and injecting a second reaction gas including a second source into the reaction chamber, wherein the second source includes a functional group that forms a volatile structure by reacting with a component that belongs to an electron withdrawing group. Graphene may be directly grown on a surface of the substrate by repeatedly injecting the first reaction gas and the second reaction gas.