The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Mar. 23, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc Nanjing Company, Limited, Nanjing, CN;
Hidehiro Fujiwara, Hsinchu, TW;
Tze-Chiang Huang, Hsinchu, TW;
Hong-Chen Cheng, Hsinchu, TW;
Yen-Huei Chen, Hsinchu, TW;
Hung-Jen Liao, Hsinchu, TW;
Jonathan Tsung-Yung Chang, Hsinchu, TW;
Yun-Han Lee, Hsinchu, TW;
Lee-Chung Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC NANJING COMPANY, LIMITED, Nanjing, CN;
Abstract
A memory macro structure includes a first memory array, a second memory array, a cell activation circuit coupled to the first and second memory arrays and positioned between the first and second memory arrays, a control circuit coupled to the cell activation circuit and positioned adjacent to the cell activation circuit, and a through-silicon via (TSV) extending through one of the cell activation circuit or the control circuit.