The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Dec. 21, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Po-Yu Lin, Yilan County, TW;
Chi-Yu Chou, Zhubei, TW;
Hsien-Ming Lee, Changhua, TW;
Huai-Tei Yang, Hsinchu, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Yueh-Ching Pai, Taichung, TW;
Chi-Jen Yang, New Taipei, TW;
Tsung-Ta Tang, Hsinchu, TW;
Yi-Ting Wang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.