The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

Feb. 20, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Abhishek A. Sharma, Hillsboro, OR (US);

Tahir Ghani, Portland, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Gilbert W. Dewey, Beaverton, OR (US);

Van H. Le, Beaverton, OR (US);

Lawrence D. Wong, Beaverton, OR (US);

Christopher J. Jezewski, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 23/29 (2006.01); H01L 29/24 (2006.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41725 (2013.01); H01L 23/293 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/78 (2013.01); H01L 29/7869 (2013.01); H01L 29/22 (2013.01); H01L 29/24 (2013.01); H01L 29/242 (2013.01);
Abstract

Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.


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