The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

May. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Po-Yao Lin, Hsinchu County, TW;

Cheng-Yi Hong, Hsinchu, TW;

Feng-Cheng Hsu, New Taipei, TW;

Shuo-Mao Chen, New Taipei, TW;

Shin-Puu Jeng, Hsinchu, TW;

Shu-Shen Yeh, Taoyuan, TW;

Kuang-Chun Lee, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/24 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 23/24 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/562 (2013.01); H01L 25/50 (2013.01); H01L 23/3731 (2013.01); H01L 23/3736 (2013.01); H01L 23/3738 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/18161 (2013.01);
Abstract

A method of forming a semiconductor device package includes the following steps. A redistribution structure is formed on a carrier. A plurality of second semiconductor devices are disposed on the redistribution structure. At least one warpage adjusting component is disposed on at least one of the second semiconductor devices. A first semiconductor device is disposed on the redistribution structure. An encapsulating material is formed on the redistribution structure to encapsulate the first semiconductor device, the second semiconductor devices and the warpage adjusting component. The carrier is removed to reveal a bottom surface of the redistribution structure. A plurality of electrical terminals are formed on the bottom surface of the redistribution structure.


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