The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Jun. 29, 2018
Intel Corporation, Santa Clara, CA (US);
Biswajeet Guha, Hillsboro, OR (US);
Anupama Bowonder, Portland, OR (US);
William Hsu, Hillsboro, OR (US);
Szuya S. Liao, Portland, OR (US);
Mehmet Onur Baykan, Beaverton, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques are disclosed for forming integrated circuits configured with self-aligned isolation walls and alternate channel materials. The alternate channel materials in such integrated circuits provide improved carrier mobility through the channel. In an embodiment, an isolation wall is between sets of fins, at least some of the fins including an alternate channel material. In such cases, the isolation wall laterally separates the sets of fins, and the alternate channel material provides improved carrier mobility. For instance, in the case of an NMOS device the alternate channel material is a material optimized for electron flow, and in the case of a PMOS device the alternate channel material is a material optimized for hole flow.