The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Oct. 23, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Fen Chen, Taoyuan, TW;
Chui-Ya Peng, Hsinchu, TW;
Ching Yu, Hsinchu County, TW;
Pin-Hen Lin, New Taipei, TW;
Yen Chuang, Taipei, TW;
Yuh-Ta Fan, Shin Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.