The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Oct. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Shan Lu, Hsinchu County, TW;

Chung-I Yang, Hsinchu, TW;

Kuo-Yi Chao, Hsinchu, TW;

Wen-Hsing Hsieh, Hsinchu, TW;

Jiun-Ming Kuo, Taipei, TW;

Chih-Ching Wang, Kinmen County, TW;

Yuan-Ching Peng, Hinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/42392 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.


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