Company Filing History:
Years Active: 2022-2025
Title: Chung-I Yang: Innovator in Semiconductor Technology
Introduction
Chung-I Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing device performance through innovative methods and materials.
Latest Patents
Among his latest patents is a groundbreaking invention titled "Source/drain silicide for multigate device performance and method of fabricating thereof." This patent discloses a source/drain silicide that improves performance in multigate devices. The exemplary device includes a first channel layer over a substrate, a second channel layer above the first, and a gate stack surrounding both channel layers. The source/drain feature is strategically placed adjacent to these layers, with specific crystallographic orientations enhancing performance. Another notable patent is "Multi-gate devices and fabricating the same with etch rate modulation." This invention outlines a semiconductor device with vertically stacked channel members and a gate structure, emphasizing the importance of dopant concentration in optimizing device functionality.
Career Highlights
Chung-I Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His work at this esteemed company has allowed him to push the boundaries of semiconductor technology and contribute to advancements that benefit the industry as a whole.
Collaborations
Throughout his career, Chung-I has collaborated with notable colleagues, including Wen-Hsing Hsieh and Jon-Hsu Ho. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the semiconductor field.
Conclusion
Chung-I Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in device performance and fabrication methods.