The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Mar. 30, 2018
Intel Corporation, Santa Clara, CA (US);
Travis W. LaJoie, Forest Grove, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Juan Alzate-Vinasco, Tigard, OR (US);
Chieh-Jen Ku, Hillsboro, OR (US);
Shem Ogadhoh, Beaverton, OR (US);
Allen B. Gardiner, Portland, OR (US);
Blake Lin, Portland, OR (US);
Yih Wang, Portland, OR (US);
Pei-Hua Wang, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Bernhard Sell, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An integrated circuit includes a base, a first transistor structure on or above the base, and a second transistor structure on or above the base, where the second transistor structure is spaced from the first transistor structure. An insulator material at least partially encapsulates an airgap or other gas pocket laterally between the first transistor structure and the second transistor structure. The gas pocket is at least 5 nm in height and at least 5 nm wide according to an embodiment, and in some cases is as tall or taller than active device layers of the transistor structures it separates.