The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Nov. 18, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ke-Ying Su, Hsinchu, TW;
Jon-Hsu Ho, Hsinchu, TW;
Ke-Wei Su, Hsinchu, TW;
Liang-Yi Chen, Hsinchu, TW;
Wen-Hsing Hsieh, Hsinchu, TW;
Wen-Koi Lai, Hsinchu, TW;
Keng-Hua Kuo, Hsinchu, TW;
KuoPei Lu, Hsinchu, TW;
Lester Chang, Hsinchu, TW;
Ze-Ming Wu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of generating a netlist of an IC device includes receiving gate region information of the IC device. The gate region information includes a width of the gate region, the width extending at least from a first edge of an active region to a second edge of the active region, a location of a gate via positioned within the active region and along the width, and a first gate resistance value corresponding to the gate region. The method includes determining a second gate resistance value based on the location and the width, and modifying the netlist based on the second gate resistance value.