The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Sep. 12, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Tung-Kai Chen, New Taipei, TW;
Ching-Hsiang Tsai, Hsinchu, TW;
Kao-Feng Liao, Hsinchu, TW;
Chih-Chieh Chang, Hsinchu County, TW;
Chun-Hao Kung, Hsinchu, TW;
Fang-I Chih, Tainan, TW;
Hsin-Ying Ho, Kaohsiung, TW;
Chia-Jung Hsu, Changhua County, TW;
Hui-Chi Huang, Hsinchu County, TW;
Kei-Wei Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.