The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Jun. 26, 2019
Infineon Technologies Ag, Neubiberg, DE;
Edward Fuergut, Dasing, DE;
Ravi Keshav Joshi, Klagenfurt, AT;
Ralf Siemieniec, Villach, AT;
Thomas Basler, Ottenhofen, DE;
Martin Gruber, Schwandorf, DE;
Jochen Hilsenbeck, Villach, AT;
Dethard Peters, Hoechstadt, DE;
Roland Rupp, Lauf, DE;
Wolfgang Scholz, Olching, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A silicon carbide device includes a silicon carbide substrate, a contact layer including nickel, silicon and aluminum, a barrier layer structure including titanium and tungsten, and a metallization layer including copper. The contact layer is located on the silicon carbide substrate. The contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure. The barrier layer structure is located between the silicon carbide substrate and the metallization layer.