The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Jul. 22, 2020
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Damodar Shanbhag, Beaverton, OR (US);

Guangbi Yuan, Beaverton, OR (US);

Thadeous Bamford, Portland, OR (US);

Curtis Warren Bailey, West Linn, OR (US);

Tony Kaushal, Campbell, CA (US);

Krishna Birru, Fremont, CA (US);

William Schlosser, Sherwood, OR (US);

Bo Gong, Sherwood, OR (US);

Huatan Qiu, Portland, OR (US);

Fengyuan Lai, Sherwood, OR (US);

Leonard Wai Fung Kho, San Francisco, CA (US);

Anand Chandrashekar, Fremont, CA (US);

Andrew H. Breninger, Hillsboro, OR (US);

Chen-Hua Hsu, Sherwood, OR (US);

Geoffrey Hohn, Portland, OR (US);

Gang Liu, Fremont, CA (US);

Rohit Khare, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/44 (2006.01); H01J 37/32 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4404 (2013.01); C23C 16/401 (2013.01); C23C 16/4405 (2013.01); C23C 16/45519 (2013.01); C23C 16/45536 (2013.01); C23C 16/45565 (2013.01); H01J 37/3244 (2013.01); H01J 37/32862 (2013.01);
Abstract

Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.


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