The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jun. 09, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yusuke Aoki, Miyagi, JP;

Toshikatsu Tobana, Miyagi, JP;

Fumiya Takata, Miyagi, JP;

Shinya Morikita, Miyagi, JP;

Kazunobu Fujiwara, Miyagi, JP;

Jun Abe, Miyagi, JP;

Koichi Nagami, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H05H 1/24 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); C23C 16/4405 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32477 (2013.01); H01L 21/02115 (2013.01); H01L 21/02123 (2013.01); H05H 1/24 (2013.01); H01J 2237/335 (2013.01);
Abstract

A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.


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