The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Aug. 11, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kai-Chiang Wu, Hsinchu, TW;

Chung-Hao Tsai, Changhua County, TW;

Chun-Lin Lu, Hsinchu, TW;

Yen-Ping Wang, Changhua County, TW;

Che-Wei Hsu, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/568 (2013.01); H01L 21/561 (2013.01); H01L 21/76829 (2013.01); H01L 21/78 (2013.01); H01L 23/291 (2013.01); H01L 23/3185 (2013.01); H01L 23/49811 (2013.01); H01L 24/05 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 24/32 (2013.01); H01L 23/3128 (2013.01); H01L 24/13 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68368 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/18 (2013.01); H01L 2224/24101 (2013.01); H01L 2224/24227 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73209 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/83005 (2013.01);
Abstract

An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.


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