logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11225721 B1

PDFFull Text
Date of Patent:
Jan. 18, 2022

Filed:

Feb. 25, 2019

Thin film etchant composition and method of forming metal pattern by using the same

Applicants:

Samsung Display Co., Ltd., Yongin-si, KR;

Dongwoo Fine-chem Co., Ltd., Jeollabuk-do, KR;

Inventors:

Jinhyung Kim, Yongin-si, KR;

Joohwan Chung, Yongin-si, KR;

Jinsook Kim, Yongin-si, KR;

Haccheol Kim, Yongin-si, KR;

Byungsu Lee, Yongin-si, KR;

Changsoo Kim, Yongin-si, KR;

Jungseek Jung, Yongin-si, KR;

Dongki Kim, Jeollabuk-do, KR;

Sangtae Kim, Jeollabuk-do, KR;

Giyong Nam, Yongin-si, KR;

Youngchul Park, Jeollabuk-do, KR;

Kyungbo Shim, Jeollabuk-do, KR;

Daesung Lim, Jeollabuk-do, KR;

Sanghoon Jang, Jeollabuk-do, KR;

Assignees:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

DONGWOO FINE-CHEM CO., LTD., Iksan-si, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
C23F 1/30 (2006.01); H01L 21/3213 (2006.01); C09K 13/04 (2006.01); C09K 13/00 (2006.01); H01L 21/465 (2006.01); C09K 13/06 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 29/786 (2006.01); C23F 1/16 (2006.01);
U.S. Cl.
CPC ...
C23F 1/30 (2013.01); C09K 13/00 (2013.01); C09K 13/04 (2013.01); C09K 13/06 (2013.01); C23F 1/16 (2013.01); H01L 21/302 (2013.01); H01L 21/306 (2013.01); H01L 21/3213 (2013.01); H01L 21/32134 (2013.01); H01L 21/465 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.

Find Patent Forward Citations

Kim, Jinhyung. (2022). Thin film etchant composition and method of forming metal pattern by using the same (U.S. Patent No. 11225721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11225721

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…