The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Aug. 19, 2019
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Xijun Guo, Fujian, CN;
Jianhua Chen, Fujian, CN;
Haipeng Zhu, Fujian, CN;
Xianlei Zhang, Fujian, CN;
Min-Hsien Chen, Taichung, TW;
Ching-Ning Yang, Kaohsiung, TW;
Wen Yi Tan, Fujian, CN;
United Semiconductor (Xiamen) Co., Ltd., Xiamen, CN;
Abstract
A method for depositing a metal layer on a wafer is disclosed. A PVD chamber is provide having therein a wafer chuck for holding a wafer to be processed, a target situated above the wafer chuck, a magnet positioned on a backside of the target, and a DC power supply for supplying a DC voltage to the target. The target is a metal or a metal alloy having ferromagnetism property. A paste process is performed to the PVD chamber. The paste process includes sequential steps of: admitting a working gas into the PVD chamber; and igniting the working gas in cascade stages. The wafer is then loaded into the PVD chamber and positioned onto the wafer chuck. A deposition process is then performed to deposit a metal layer sputtered from the target onto the wafer.