Kaohsiung, Taiwan

Ching-Ning Yang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Ching-Ning Yang: Innovator in Metal Layer Deposition Technology

Introduction

Ching-Ning Yang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in methods for depositing metal layers on wafers. His innovative approach has implications for various applications in the electronics industry.

Latest Patents

Ching-Ning Yang holds a patent for a "Method for depositing a metal layer on a wafer." This patent describes a process involving a physical vapor deposition (PVD) chamber equipped with a wafer chuck, a target, and a magnet. The method includes a paste process that involves admitting a working gas and igniting it in cascade stages, followed by the deposition of a metal layer onto the wafer.

Career Highlights

Ching-Ning Yang is currently employed at United Semiconductor (Xiamen) Co., Ltd. His work focuses on advancing semiconductor manufacturing techniques, which are crucial for the production of modern electronic devices. His expertise in this area has positioned him as a valuable asset in the industry.

Collaborations

Ching-Ning Yang has collaborated with several professionals in his field, including Xijun Guo and Jianhua Chen. These collaborations have fostered innovation and development in semiconductor technologies.

Conclusion

Ching-Ning Yang's contributions to the semiconductor industry, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the field of electronics and semiconductor manufacturing.

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