Location History:
- Singapore, SG (2021)
- Fujian, CN (2022)
Company Filing History:
Years Active: 2021-2022
Title: Xijun Guo: Innovator in Metal Layer Deposition and Electro-Chemical Plating
Introduction
Xijun Guo is a notable inventor based in Fujian, China. He has made significant contributions to the field of semiconductor manufacturing, particularly in methods for depositing metal layers on wafers. With a total of 2 patents, his work has advanced the technology used in various applications.
Latest Patents
Xijun Guo's latest patents include a "Method for depositing a metal layer on a wafer" and a "Method of electro-chemical plating." The first patent describes a process involving a PVD chamber equipped with a wafer chuck, a target, and a magnet. This innovative method allows for the deposition of a metal layer onto a wafer through a series of carefully controlled steps. The second patent outlines a method of electro-chemical plating, where the substrate is biased to attract metal ions from the electrolyte, facilitating the plating process.
Career Highlights
Xijun Guo is currently employed at United Semiconductor (Xiamen) Co., Ltd. His work at this company has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor technology. His expertise in metal deposition techniques has positioned him as a valuable asset in the industry.
Collaborations
Xijun Guo has collaborated with several talented individuals in his field, including Shouguo Zhang and Jinggang Li. These collaborations have fostered an environment of innovation and have led to the development of new technologies in semiconductor manufacturing.
Conclusion
Xijun Guo's contributions to the field of semiconductor technology through his patents and work at United Semiconductor (Xiamen) Co., Ltd. highlight his role as a key innovator. His methods for metal layer deposition and electro-chemical plating are paving the way for advancements in the industry.