Haipeng Zhu

Title: Haipeng Zhu: Innovator in Metal Layer Deposition Technology

Introduction

Haipeng Zhu is a notable inventor based in Fujian, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of metal layer deposition on wafers. His innovative approach has led to the development of a patented method that enhances the efficiency and effectiveness of this critical process.

Latest Patents

Haipeng Zhu holds a patent for a "Method for depositing a metal layer on a wafer." This patent describes a process involving a Physical Vapor Deposition (PVD) chamber equipped with a wafer chuck, a target situated above the chuck, and a magnet positioned on the backside of the target. The method utilizes a DC power supply to provide voltage to the target, which is made of a metal or metal alloy with ferromagnetic properties. The process includes a series of steps such as admitting a working gas into the chamber and igniting it in cascade stages, followed by loading the wafer and depositing a metal layer onto it.

Career Highlights

Haipeng Zhu is currently employed at United Semiconductor (Xiamen) Co., Ltd. His work at this company has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor manufacturing. His expertise in the field is reflected in his patent and the impact it has on the industry.

Collaborations

Haipeng Zhu has collaborated with notable colleagues such as Xijun Guo and Jianhua Chen. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the semiconductor field.

Conclusion

Haipeng Zhu is a distinguished inventor whose work in metal layer deposition technology has made a significant impact on the semiconductor industry. His patented method showcases his innovative spirit and dedication to advancing technology. His contributions continue to influence the field and inspire future innovations.