The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2021

Filed:

Feb. 25, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Anthony K. Stamper, Burlington, VT (US);

Henry L. Aldridge, Jr., Williston, VT (US);

Johnatan A. Kantarovsky, South Burlington, VT (US);

Jeonghyun Hwang, Ithaca, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/763 (2013.01); H01L 29/0649 (2013.01);
Abstract

Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.


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