Henry L Aldridge, Jr

Title: Henry L Aldridge, Jr: Innovator in Integrated Circuit Technology

Introduction

Henry L Aldridge, Jr. is a notable inventor based in Williston, VT (US). He has made significant contributions to the field of integrated circuit technology, holding a total of 3 patents. His work focuses on enhancing semiconductor structures, which are crucial for modern electronic devices.

Latest Patents

One of his latest patents is titled "Integrated circuit structure with semiconductor-based isolation structure and methods to form same." This patent describes an integrated circuit (IC) structure that includes a semiconductor-based isolation structure on a substrate. The design features a shallow trench isolation (STI) structure positioned on the semiconductor-based isolation structure. An active semiconductor region is located on the substrate, adjacent to both the semiconductor-based isolation structure and the STI structure. This active region comprises a doped semiconductor material, and at least one device on the active semiconductor region may be horizontally distal to the STI structure.

Career Highlights

Henry L Aldridge, Jr. is currently employed at Globalfoundries U.S. Inc., where he continues to innovate in the semiconductor industry. His expertise in integrated circuit design has positioned him as a valuable asset in his field.

Collaborations

Throughout his career, Aldridge has collaborated with notable colleagues, including Anthony K Stamper and Johnatan A Kantarovsky. These collaborations have furthered advancements in integrated circuit technology.

Conclusion

Henry L Aldridge, Jr. is a prominent figure in the realm of integrated circuits, with a focus on semiconductor-based isolation structures. His contributions and patents reflect his commitment to innovation in technology.