The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Oct. 24, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Pei-Haw Tsao, Tai-Chung, TW;
Chen-Shien Chen, Zhubei, TW;
Cheng-Hung Tsai, Tainan, TW;
Kuo-Chin Chang, Chiayi, TW;
Li-Huan Chu, Hsin Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01);
Abstract
A semiconductor device includes a substrate and at least one bump structure disposed over the substrate. The at least one bump structure includes a pillar formed of a metal having a lower solderability than copper or a copper alloy to a solder alloy disposed over the substrate. A solder alloy is formed directly over and in contact with an upper surface of the metal having the lower solderability than copper or a copper alloy. The pillar has a height of greater than 10 μm.