The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Oct. 15, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yao-Wen Chang, Taipei, TW;
Chung-Chiang Min, Zhubei, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Hung Cho Wang, Taipei, TW;
Tsung-Hsueh Yang, Taichung, TW;
Yuan-Tai Tseng, Zhubei, TW;
Sheng-Huang Huang, Hsinchu, TW;
Chia-Hua Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip including a magnetoresistive random access memory (MRAM) cell over a substrate. A dielectric structure overlies the substrate. The MRAM cell is disposed within the dielectric structure. The MRAM cell includes a magnetic tunnel junction (MTJ) sandwiched between a bottom electrode and a top electrode. A conductive wire overlies the top electrode. A sidewall spacer structure continuously extends along a sidewall of the MTJ and the top electrode. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. The first and second sidewall spacer layers comprise a first material and the protective sidewall spacer layer comprises a second material different than the first material.