The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Sep. 13, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Wei Hsu, Hsinchu, TW;
Ling-Fu Nieh, Taipei, TW;
Pinlei Edmund Chu, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
Yi-Sheng Lin, Taichung, TW;
Ting-Hsun Chang, Kaohsiung, TW;
Chia-Wei Ho, Kaohsiung, TW;
Liang-Guang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.