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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101173 B1

PDFFull Text
Date of Patent:
Aug. 24, 2021

Filed:

Mar. 18, 2019

Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Robert Clark, Albany, NY (US);

Jeffrey Smith, Albany, NY (US);

Kandabara Tapily, Albany, NY (US);

Angelique Raley, Albany, NY (US);

Qiang Zhao, Fremont, CA (US);

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Bernard G Lindsay

Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01); H01L 21/677 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); G05B 13/02 (2006.01); G05B 19/418 (2006.01); C23C 14/24 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); G05B 13/027 (2013.01); G05B 19/41875 (2013.01); H01L 21/0228 (2013.01); H01L 21/02271 (2013.01); H01L 21/28562 (2013.01); H01L 21/31116 (2013.01); H01L 21/67023 (2013.01); H01L 21/67063 (2013.01); H01L 21/67161 (2013.01); H01L 21/67167 (2013.01); H01L 21/67184 (2013.01); H01L 21/67196 (2013.01); H01L 21/67225 (2013.01); H01L 21/67253 (2013.01); H01L 21/67276 (2013.01); H01L 21/67288 (2013.01); H01L 21/67703 (2013.01); H01L 21/67742 (2013.01); H01L 21/67745 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 22/12 (2013.01); C23C 14/24 (2013.01); C23C 14/34 (2013.01); G05B 2219/32368 (2013.01); G05B 2219/45031 (2013.01); H01J 37/32 (2013.01); H01L 21/67017 (2013.01); H01L 21/67207 (2013.01);
Abstract

This disclosure relates to a method for using a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing method can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

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