The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 2021

Filed:

Apr. 26, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Jiun-Ting Chen, Hsinchu, TW;

Ying-Ching Shih, Hsinchu, TW;

Szu-Wei Lu, Hsinchu, TW;

Chih-Wei Wu, Zhuangwei Township, Yilan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/563 (2013.01); H01L 23/3157 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A method for forming a chip package structure is provided. The method includes bonding a first chip structure and a second chip structure to a surface of a substrate. The first chip structure and the second chip structure are spaced apart from each other. There is a first gap between the first chip structure and the second chip structure. The method includes removing a first portion of the first chip structure and a second portion of the second chip structure to form a trench partially in the first chip structure and the second chip structure and partially over the first gap. The method includes forming an anti-warpage bar in the trench. The anti-warpage bar is over the first chip structure, the second chip structure, and the first gap.


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