The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Aug. 30, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tai-I Yang, Hsinchu, TW;
Wei-Chen Chu, Taichung, TW;
Li-Lin Su, Taichung, TW;
Shin-Yi Yang, New Taipei, TW;
Cheng-Chi Chuang, New Taipei, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a conductive feature in a first dielectric layer. The semiconductor device structure also includes an etching stop layer over the first dielectric layer and a second dielectric layer over the etching stop layer. The semiconductor device structure further includes a conductive via in the etching stop layer and the second dielectric layer. In addition, the semiconductor device structure includes a conductive line over the conductive via. The semiconductor device structure also includes a first barrier liner covering the bottom surface of the conductive line. The semiconductor device structure further includes a second barrier liner surrounding sidewalls of the conductive line and the conductive via. The conductive line and the conductive via are confined in the first barrier liner and the second barrier liner.