The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Aug. 27, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Eric J. Li, Chandler, AZ (US);

Timothy A. Gosselin, Phoenix, AZ (US);

Yoshihiro Tomita, Ibaraki, JP;

Shawna M. Liff, Scottsdale, AZ (US);

Amram Eitan, Scottsdale, AZ (US);

Mark Saltas, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 23/13 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5381 (2013.01); H01L 21/4853 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 23/13 (2013.01); H01L 23/3157 (2013.01); H01L 23/48 (2013.01); H01L 23/5385 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/95 (2013.01); H01L 24/96 (2013.01); H01L 25/0655 (2013.01); H01L 21/568 (2013.01); H01L 23/5383 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/48 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/1182 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/14134 (2013.01); H01L 2224/14177 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/1701 (2013.01); H01L 2224/1703 (2013.01); H01L 2224/27002 (2013.01); H01L 2224/3201 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/81011 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/95 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/96 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01);
Abstract

A microelectronic structure includes a microelectronic substrate having a first surface and a cavity extending into the substrate from the microelectronic substrate first surface, a first microelectronic device and a second microelectronic device attached to the microelectronic substrate first surface, and a microelectronic bridge disposed within the microelectronic substrate cavity and attached to the first microelectronic device and to the second microelectronic device. In one embodiment, the microelectronic structure may include a reconstituted wafer formed from the first microelectronic device and the second microelectronic device. In another embodiment, a flux material may extend between the first microelectronic device and the microelectronic bridge and between the second microelectronic device and the microelectronic bridge.


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