The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Dec. 27, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hsin-Li Cheng, Hsin Chu, TW;
Jyun-Ying Lin, Wujie Township, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Shih-Fen Huang, Jhubei, TW;
Shu-Hui Su, Tucheng, TW;
Ting-Chen Hsu, Taichung, TW;
Tuo-Hsin Chien, Zhubei, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
Shi-Min Wu, Changhua County, TW;
Yu-Chi Chang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a pillar structure abutting a trench capacitor. A substrate has sidewalls that define a trench. The trench extends into a front-side surface of the substrate. The trench capacitor includes a plurality of capacitor electrode layers and a plurality of capacitor dielectric layers that respectively line the trench and define a cavity within the substrate. The pillar structure is disposed within the substrate. The pillar structure has a first width and a second width less than the first width. The first width is aligned with the front-side surface of the substrate and the second width is aligned with a first point disposed beneath the front-side surface.