The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Dec. 18, 2019
Applied Materials Israel Ltd., Rehovot, IL;
Roman Kris, Jerusalem, IL;
Grigory Klebanov, Rishon-le-Zion, IL;
Dhananjay Singh Rathore, Boise, ID (US);
Einat Frishman, Rehovot, IL;
Sharon Duvdevani-Bar, Mazkeret-Batya, IL;
Assaf Shamir, Tel-Aviv, IL;
Elad Sommer, Nes-Harim, IL;
Jannelle Anna Geva, Tel-Aviv, IL;
Daniel Alan Rogers, Boise, ID (US);
Ido Friedler, Haifa, IL;
Avi Aviad Ben Simhon, Ashdod, IL;
APPLIED MATERIALS ISRAEL LTD., Rehovot, IL;
Abstract
An evaluation system that may include an imager; and a processing circuit. The imager may be configured to obtain an electron image of a hole that is formed by an etch process, the hole exposes at least one layer of a one or more sets of layers, each set of layers comprises layers that differ from each other by their electron yield and belong to an intermediate product. The processing circuit may be configured to evaluate, based on the electron image, whether the hole ended at a target layer of the intermediate product. The intermediate product is manufactured by one or more manufacturing stages of a manufacturing process of a three dimensional NAND memory unit. The hole may exhibit a high aspect ratio, and has a width of a nanometric scale.