Company Filing History:
Years Active: 2021-2022
Title: Assaf Shamir: Innovator in NAND Memory Technology
Introduction
Assaf Shamir is a prominent inventor based in Tel Aviv, Israel. He has made significant contributions to the field of NAND memory technology, holding 2 patents that showcase his innovative approach to evaluating intermediate products in this domain.
Latest Patents
His latest patents include a method and system for evaluating an intermediate product related to a three-dimensional NAND memory unit. This evaluation system comprises an imager and a processing circuit designed to obtain an electron image of a portion of a structural element belonging to the intermediate product. The imager is configured to capture images through an open gap, which exhibits a high aspect ratio and is formed between structural elements. The processing circuit evaluates the intermediate product based on the electron image obtained.
Another notable patent focuses on evaluating a hole formed in an intermediate product. This system also includes an imager and a processing circuit. The imager captures an electron image of a hole created by an etch process, exposing layers that differ by their electron yield. The processing circuit assesses whether the hole has reached a target layer of the intermediate product, which is crucial for the manufacturing process of a three-dimensional NAND memory unit.
Career Highlights
Assaf Shamir is currently employed at Applied Materials Israel Limited, where he continues to push the boundaries of technology in the semiconductor industry. His work is instrumental in enhancing the efficiency and effectiveness of NAND memory units.
Collaborations
He collaborates with talented coworkers, including Roman Kris and Sharon Duvdevani-Bar, contributing to a dynamic and innovative work environment.
Conclusion
Assaf Shamir's contributions to NAND memory technology through his patents and work at Applied Materials Israel Limited highlight his role as a key innovator in the field. His advancements are paving the way for future developments in memory technology.
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