The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Apr. 18, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Pei-Cheng Hsu, Taipei, TW;
Yih-Chen Su, Taichung, TW;
Chi-Kuang Tsai, Hsinchu, TW;
Ta-Cheng Lien, Hsinchu County, TW;
Tzu Yi Wang, Hsinchu, TW;
Jong-Yuh Chang, Hsinchu County, TW;
Hsin-Chang Lee, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.