The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Nov. 02, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Hao Kung, Hsinchu, TW;

Tung-Kai Chen, New Taipei, TW;

Chih-Chieh Chang, Zhubei, TW;

Kao-Feng Liao, Hsinchu, TW;

Hui-Chi Huang, Zhubei, TW;

Kei-Wei Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/768 (2006.01); C09G 1/02 (2006.01); C09G 1/04 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3212 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); H01L 21/30625 (2013.01); H01L 21/76843 (2013.01);
Abstract

Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.


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