The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

Jan. 08, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Chang Ke, Sunnyvale, CA (US);

Song-Moon Suh, San Jose, CA (US);

Liqi Wu, San Jose, CA (US);

Michael S. Jackson, Sunnyvale, CA (US);

Lei Zhou, San Jose, CA (US);

Biao Liu, San Jose, CA (US);

Cheng Pan, San Jose, CA (US);

Paul F. Ma, Santa Clara, CA (US);

Mei Chang, Saratoga, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 3/04 (2006.01); B05D 1/00 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); B05D 1/18 (2006.01);
U.S. Cl.
CPC ...
B05D 3/044 (2013.01); B05D 1/60 (2013.01); B05D 3/0453 (2013.01); C23C 16/04 (2013.01); C23C 16/042 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/45563 (2013.01); H01L 21/0228 (2013.01); H01L 21/02057 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/3105 (2013.01); H01L 21/321 (2013.01); B05D 1/185 (2013.01); B05D 3/048 (2013.01);
Abstract

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.


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