The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2021

Filed:

Jul. 02, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yao-Sheng Huang, Kaohsiung, TW;

Hung-Chang Sun, Kaohsiung, TW;

I-Ming Chang, Hsinchu, TW;

Zi-Wei Fang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0262 (2013.01); H01L 21/02488 (2013.01); H01L 21/02513 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02598 (2013.01); H01L 21/02639 (2013.01); H01L 21/02661 (2013.01); H01L 21/02675 (2013.01); H01L 21/31116 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/30604 (2013.01);
Abstract

A semiconductor includes a substrate, a semiconductor fin, an STI structure, a fin sidewall spacer, and a doped silicon layer. The semiconductor fin extends from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The fin sidewall spacer extends along a middle portion of the semiconductor fin that is above the lower portion of the semiconductor fin. The doped silicon layer wraps around three sides of an upper portion of the semiconductor fin that is above the middle portion of the semiconductor fin.


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