The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jul. 19, 2019
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Chao-Hsiang Chen, Hsinchu, TW;

Yi-Chia Lee, Chupei, TW;

Wen Dar Liu, Zhubei, TW;

Chung-Yi Chang, Chupei, TW;

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/26 (2006.01); C11D 7/32 (2006.01); C11D 7/50 (2006.01); H01L 21/02 (2006.01); C11D 7/34 (2006.01); B08B 3/04 (2006.01); B08B 3/10 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02068 (2013.01); B08B 3/04 (2013.01); B08B 3/10 (2013.01); C11D 7/261 (2013.01); C11D 7/265 (2013.01); C11D 7/267 (2013.01); C11D 7/3209 (2013.01); C11D 7/3281 (2013.01); C11D 7/34 (2013.01); C11D 7/50 (2013.01); C11D 7/5068 (2013.01); C11D 7/5077 (2013.01); C11D 7/5095 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01);
Abstract

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.


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