Hsinchu, Taiwan

Chao-Hsiang Chen


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):

Title: Innovations by Chao-Hsiang Chen in Electronic Circuitry Cleaning Solutions

Introduction

Chao-Hsiang Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electronic circuitry, particularly in the area of cleaning compositions for advanced pattern wafers. His innovative work has led to the development of a unique solution that addresses the challenges associated with TiN hard mask removal.

Latest Patents

Chao-Hsiang Chen holds a patent for a composition designed for TiN hard mask removal and etch residue cleaning. The patent, titled "Composition, method and system for TiN hard mask removal from electronic circuitry devices," outlines a cleaning composition that includes an etchant agent, an oxidizing agent, an oxidizing stabilizer, an ammonium salt, a corrosion inhibitor, and a solvent. The composition is formulated to have a pH greater than 5.5 and is free from dimethyl sulfoxide and tetramethylammonium hydroxide. This innovative approach enhances the efficiency of cleaning electronic devices, ensuring optimal performance.

Career Highlights

Chao-Hsiang Chen is currently employed at Versum Materials US, LLC, where he continues to develop and refine cleaning solutions for the semiconductor industry. His expertise in chemical compositions and their applications in electronics has positioned him as a valuable asset in his field.

Collaborations

Chao-Hsiang Chen has collaborated with notable colleagues, including Yi-Chia Lee and Wen Dar Liu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Chao-Hsiang Chen's contributions to the field of electronic circuitry cleaning solutions exemplify the importance of innovation in technology. His patented work not only addresses specific industry challenges but also paves the way for future advancements in semiconductor manufacturing.

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