The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 2021

Filed:

Sep. 16, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Seiji Takahashi, Hsinchu, TW;

Chen-Jong Wang, Hsin-Chu, TW;

Dun-Nian Yaung, Taipei, TW;

Feng-Chi Hung, Chu-Bei, TW;

Feng-Jia Shiu, Jhudong Township, TW;

Jen-Cheng Liu, Hsin-Chu, TW;

Jhy-Jyi Sze, Hsin-Chu, TW;

Chun-Wei Chang, Tainan, TW;

Wei-Cheng Hsu, Kaohsiung, TW;

Wei Chuang Wu, Tainan, TW;

Yimin Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14612 (2013.01); H01L 27/14641 (2013.01); H01L 27/14689 (2013.01);
Abstract

In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.


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