The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Oct. 30, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Wenhui Wang, San Jose, CA (US);
Huixiong Dai, San Jose, CA (US);
Christopher S. Ngai, Burlingame, CA (US);
Liqi Wu, San Jose, CA (US);
Wenyu Zhang, San Jose, CA (US);
Yongmei Chen, San Jose, CA (US);
Hao Chen, Santa Clara, CA (US);
Keith Tatseun Wong, Los Gatos, CA (US);
Ke Chang, Singapore, SG;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.