The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

May. 18, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shang-Ying Wu, Hsinchu County, TW;

Shang-Chieh Chien, New Taipei, TW;

Bo-Tsun Liu, Taipei, TW;

Li-Jui Chen, Hsinchu, TW;

Po-Chung Cheng, Zhongpu Township, Chiayi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70925 (2013.01); G03F 7/70025 (2013.01); G03F 7/70033 (2013.01); G03F 7/70175 (2013.01); H05G 2/008 (2013.01);
Abstract

A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.


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