The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Sep. 28, 2016
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Peter Ten Berge, Eindhoven, NL;

Everhardus Cornelis Mos, Best, NL;

Richard Johannes Franciscus Van Haren, Waalre, NL;

Peter Hanzen Wardenier, Eindhoven, NL;

Erik Jensen, Veldhoven, NL;

Bernardo Kastrup, Veldhoven, NL;

Michael Kubis, Meerbusch, DE;

Johannes Catharinus Hubertus Mulkens, Valkenswaard, NL;

David Frans Simon Deckers, Turnhout, BE;

Wolfgang Helmut Henke, Kempen, DE;

Joungchel Lee, Eindhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/00 (2012.01); G06F 30/398 (2020.01); G03F 7/20 (2006.01); G03F 1/72 (2012.01); G06F 119/22 (2020.01); G06F 119/18 (2020.01); G03B 27/68 (2006.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/72 (2013.01); G03F 7/705 (2013.01); G03F 7/7065 (2013.01); G03F 7/70425 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G03B 27/68 (2013.01); G06F 2119/18 (2020.01); G06F 2119/22 (2020.01);
Abstract

A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.


Find Patent Forward Citations

Loading…