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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10879198 B1

PDFFull Text
Date of Patent:
Dec. 29, 2020

Filed:

Mar. 15, 2019

Package with solder regions aligned to recesses

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ching-Jung Yang, Pingzhen, TW;

Hsien-Wei Chen, Hsinchu, TW;

Hsien-Ming Tu, Zhubei, TW;

Chang-Pin Huang, Yangmei Township, TW;

Yu-Chia Lai, Zhunan Township, TW;

Tung-Liang Shao, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Hsien Ming Lee

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/02 (2013.01); H01L 21/76802 (2013.01); H01L 23/3171 (2013.01); H01L 23/49811 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 23/5226 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02125 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02351 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05563 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/14 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method includes forming a passivation layer over a portion of a metal pad, forming a polymer layer over the passivation layer, and exposing the polymer layer using a photolithography mask. The photolithography mask has an opaque portion, a transparent portion, and a partial transparent portion. The exposed polymer layer is developed to form an opening, wherein the metal pad is exposed through the opening. A Post-Passivation Interconnect (PPI) is formed over the polymer layer, wherein the PPI includes a portion extending into the opening to connect to the metal pad.

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