The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Dec. 27, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Alum Jung, Suwon-si, KR;
Keunwook Shin, Yongin-si, KR;
Kyung-Eun Byun, Seongnam-si, KR;
Hyeonjin Shin, Suwon-si, KR;
Hyunseok Lim, Suwon-si, KR;
Seunggeol Nam, Suwon-si, KR;
Hyunjae Song, Hwaseong-si, KR;
Yeonchoo Cho, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.