The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Apr. 13, 2020
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Xiaowang Dai, Wuhan, CN;
Zhenyu Lu, Hubei, CN;
Jun Chen, Wuhan, CN;
Qian Tao, Hubei, CN;
Yushi Hu, Hubei, CN;
Jifeng Zhu, Hubei, CN;
Jin Wen Dong, Hubei, CN;
Ji Xia, Hubei, CN;
Zhong Zhang, Hubei, CN;
Yan Ni Li, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.