The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Dec. 02, 2019
Tokyo Electron Limited, Tokyo, JP;
Toshiya Tsukahara, Miyagi, JP;
Shuhei Yamabe, Miyagi, JP;
Kota Yachi, Miyagi, JP;
Tetsuji Sato, Miyagi, JP;
Yohei Uchida, Miyagi, JP;
Ayuta Suzuki, Nirasaki, JP;
Yosuke Tamura, Miyagi, JP;
Hidetoshi Hanaoka, Miyagi, JP;
Junichi Sasaki, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.