The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Apr. 19, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ke-Ying Su, Taipei, TW;
Jon-Hsu Ho, New Taipei, TW;
Ke-Wei Su, Zhubei, TW;
Liang-Yi Chen, Hsinchu, TW;
Wen-Hsing Hsieh, Hsinchu, TW;
Wen-Koi Lai, Hsinchu, TW;
Keng-Hua Kuo, Hsinchu, TW;
KuoPei Lu, Hsinchu, TW;
Lester Chang, Hsinchu, TW;
Ze-Ming Wu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of generating a netlist of an IC device includes extracting dimensions of a gate region of the IC device, the dimensions including a width of the gate region, the width extending at least from a first edge of an active region to a second edge of the active region, and a distance from a first end of the width to a gate via positioned along the width. A first gate resistance value corresponding to the gate region is received, a second gate resistance value is determined based on the distance and the width, and the netlist is updated based on the first and second gate resistance values.