The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2020
Filed:
Mar. 25, 2015
Lam Research Corporation, Fremont, CA (US);
Ramesh Chandrasekharan, Portland, OR (US);
Saangrut Sangplung, Sherwood, OR (US);
Shankar Swaminathan, Beaverton, OR (US);
Frank L. Pasquale, Tualatin, OR (US);
Hu Kang, Tualatin, OR (US);
Adrien LaVoie, Newberg, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate including a plurality of first through-holes for distributing gas onto a substrate in the semiconductor processing apparatus, and a porous baffle positioned in a region between the plenum volume and the one or more gas inlets. The one or more gas inlets can include a stem having a small volume to improve purge time. The baffle can be porous and positioned between the stem and the plenum volume to improve flow uniformity and avoid jetting.